OPTICAL CHARACTERIZATION OF CHEMICAL BEAM EPITAXY-GROWN GA0.52IN0.48PLAYERS AND RELATED MICROSTRUCTURES

Ga0.52In0.48P layers grown by chemical beam epitaxy (CBE) and lattice matched to (100) GaAs were investigated by spectroscopic methods (Rama n, Brillouin and ellipsometry). For the first time, the acoustic prope rties of this crystal were measured, as well as the variation of the r eal part of the refractive index over a large energy range including t he crystal band gap. Selective area epitaxy (SAE) was characterized by combining spatially resolved (1 mu m) Raman and photoluminescence stu dies. An In enrichment (maximum, 2.5%) was observed for narrow stripes (less than 5 mu m) and also when the limits of the mask were approach ed at distances smaller than 5 mu m. The advantages of CBE with respec t to the other techniques were clearly demonstrated in the case of SAE . Finally, the importance of light scattering for structural and compo sitional characterizations was demonstrated for GaAs/Ga0.52In0.48P sup erlattices from the measurements of the folded acoustic mode Raman shi fts.