CHARACTERIZATION OF HIGH-QUALITY INGAP GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/

Authors
CALDIRONI M VITALI L DELLAGIOVANNA M DIPAOLA A VIDIMARI F PELLEGRINO S FERRARI C FRANZOSI P
Citation
M. Caldironi et al., CHARACTERIZATION OF HIGH-QUALITY INGAP GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 158-163
Citations number
17
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
158 - 163
Database
ISI
SICI code
0921-5107(1994)28:1-3<158:COHIGA>2.0.ZU;2-H
Abstract
A thermodynamic approach to the epitaxial deposition of InGaAsP alloys onto GaAs substrates was reviewed, and good agreement was found with experiments when neglecting the 2V(2)=V-4 (V=As, P) vapour phase react ion. InGaAsP and its ternary limit InGaP were grown at different tempe ratures, substrate misorientation and V-m ratios. X-ray diffraction te chniques and photoluminescence were employed to assess the quality of the materials grown.