METAL-ORGANIC VAPOR-PHASE EPITAXY GROWTH AND RAMAN CHARACTERIZATION OF (111)A AND (111)B ORIENTED GAAS INP HETEROSTRUCTURES/

Epitaxial growth on surfaces with orientation different from the canon ical (001) is very interesting because materials with specific propert ies can be obtained depending on the orientation of the substrate and this process, when associated with selective epitaxy, can be a powerfu l tool for preparing new devices. In this study (111) A and B homoepit axial layers and GaAs/InP heterostructures of different thicknesses we re prepared by metal-organic vapour phase epitaxy under different V/II I ratios. The surface morphology was examined using Normarski microsco py and the strain release was studied using Raman scattering. The resu lts show that faceted growth is obtained for different V/III values on A and B polarities; the best strain release condition and surface mor phologies are obtained under high V/III regimes.