SELECTIVE LIQUID-PHASE EPITAXY GROWTH OF INXGA1-XASYP1-Y ON STRUCTURED GAAS(100) SUBSTRATES

This work deals with the liquid-phase epitaxy (LPE) growth InxGa1-xAsy P1-y materials lattice matched to GaAs. We examine the growth of two d ifferent InxGa1-xAsyP1-y compositions denoted A and B. They have 1.9 e V and 1.58 eV band gap energies respectively. We estimate the optical two-phase LPE growth conditions for such quaternaries and for multiple submicron layers of A-B materials. We report the dependence of the gr owth kinetics on the crystal facets. We have found that the LPE growth of ultrathin multilayers in the InxGa1-xAsyP1-y/GaAs system, with uni form layer thickness and without noticeable transition layers was poss ible. Furthermore, we have found anisotropic effects on non-planar sub strates (i.e. faster kinetics in the (100) direction than in the (111) direction). These results can be utilized to grow, by LPE, visible la sers containing a multiple-quantum-well active region and buried struc tures.