DEPTH PROFILING OF INAS INP AND INXGA1-XAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
BRUNI MR GAMBACORTI N KACIULIS S MATTOGNO G SIMEONE MG VITICOLI S
Citation
Mr. Bruni et al., DEPTH PROFILING OF INAS INP AND INXGA1-XAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 228-231
Citations number
14
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
228 - 231
Database
ISI
SICI code
0921-5107(1994)28:1-3<228:DPOIIA>2.0.ZU;2-C
Abstract
Highly strained InAs/InP heterostructures and InxGa1-xAs/InAs single q uantum wells on InP(100) substrates were grown by molecular beam epita xy. The fabricated heterostructures were investigated by means of the selected-area X-ray photoelectron spectroscopy (SAXPS) depth profiling technique. The depth resolution of the SAXPS profiling was found to b e limited mainly by the photoelectron information depth. It was demons trated that the ternary compound InAsxPx is formed on the InP substrat e during its deoxidation under an arsenic flux. The thickness of the I nAsxP1-x interfacial sublayer was determined and the segregation of in dium on the sample and substrate surfaces was revealed from the SAXPS profiles.