FULLY PLANAR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING CHEMICAL BEAM EPITAXY SELECTIVE GROWTH/

Authors
DRIAD R DUCHENOIS AM LEROUX G ZERGUINE D ALEXANDRE F BENCHIMOL JL LEGAY P LAUNAY P
Citation
R. Driad et al., FULLY PLANAR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING CHEMICAL BEAM EPITAXY SELECTIVE GROWTH/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 261-263
Citations number
6
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
261 - 263
Database
ISI
SICI code
0921-5107(1994)28:1-3<261:FPAGHB>2.0.ZU;2-N
Abstract
Fully planar AlGaAs/GaAs heterojunction bipolar transitors (HBTs) were fabricated successfully using chemical beam epitaxy selective regrowt h. The device performance and fabrication process are presented along with characterization of the electrical, structural and optical proper ties of GaAs:C layers which correspond to the HBT base layer.