STRAINED MULTIQUANTUM-WELL HETEROSTRUCTURES FOR LASERS, MODULATORS AND INTEGRATED OPTICAL-DEVICES AT 1.3-1.55MU-M

Authors
MIRCEA A OUGAZZADEN A BOUADMA N DEVAUX F MARZIN JY RAMDANE A BARRAU J PONCHET A
Citation
A. Mircea et al., STRAINED MULTIQUANTUM-WELL HETEROSTRUCTURES FOR LASERS, MODULATORS AND INTEGRATED OPTICAL-DEVICES AT 1.3-1.55MU-M, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 279-284
Citations number
14
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
279 - 284
Database
ISI
SICI code
0921-5107(1994)28:1-3<279:SMHFLM>2.0.ZU;2-4
Abstract
In recent years it has become clear that the adequate inclusion of str ain in the design of complex InGaAsP heterostructures offers wide oppo rtunities for improving the performances of optoelectronic devices. Th is paper discusses two different kinds of strained heterostructure dev ices: (i) polarization-independent electroabsorption modulators and (i i) constant y (i.e. constant As/P) lasers at 1.3 and 1.55 mu m. Finall y, phenomena of alloy composition instability at growth time will be d emonstrated which may cause practical limitation in the design.