BURIED HETEROSTRUCTURE ALGAAS PHOTONIC DEVICES FABRICATED BY LOW-TEMPERATURE MESA MELT ETCHING AND REGROWTH

Low temperature melt-etching and liquid phase epitaxial regrowth was u sed to fabricate buried heterostructure laser diode arrays, optical am plifiers and active waveguide branches. 12 element laser diode arrays emitted 1 W total optical power at 1.2 A (room temperature, continuous wave) at 980 nm. 6 dB fiber to fiber optical gain was obtained in bur ied heterostructure optical amplifiers operating at 830 nm. Active bra nching waveguides are shown to allow the compensation of 3 dB branchin g losses.