R. Schwedler et al., QUANTITATIVE COMPARISON OF MASS-SPECTROMETRY AND PHOTOLUMINESCENCE ONINASP INP MULTIPLE-QUANTUM-WELL STRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 319-322
We report a direct comparison of low-temperature photoluminescence spe
ctroscopy and sputtered neutral mass spectrometry on an asymmetric InA
sP/InP multiple quantum well structure. Distinct luminescence peaks fr
om all quantum well layers were observed. They were unambiguously assi
gned to individual quantum well layers by subsequent sputter etching s
teps. Based on mass spectrometry data, numerical calculations of the l
uminescence transitions were performed without any free parameters. Th
e consequences of the excellent agreement between the experimental and
modelled photoluminescence data are discussed.