OBSERVATION OF BLUE-SHIFT IN GAAS INGAP QUANTUM-WELL P-I-N-DIODES/

Authors
GHISONI M PARRY G LYCETT S DEWDNEY A HART L MURRAY R BUTTON C ROBERTS JS
Citation
M. Ghisoni et al., OBSERVATION OF BLUE-SHIFT IN GAAS INGAP QUANTUM-WELL P-I-N-DIODES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 323-326
Citations number
15
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
323 - 326
Database
ISI
SICI code
0921-5107(1994)28:1-3<323:OOBIGI>2.0.ZU;2-#
Abstract
In this paper we present results on the spectral response of p-i-n GaA s/InGaP quantum well (QW) material grown on a 10 degrees off GaAs(100) substrate. Room temperature photocurrent spectroscopy shows that alth ough no excitonic features are resolvable at 0 V, clear excitonic tran sitions are observed on application of an electric field. This effect is accompanied by a blue shift and sharpening of the band edge. Such a phenomenon is consistent with the formation of a narrow, low band gap QW at the InGaP-GaAs interface caused by an indium memory effect duri ng growth.