ELECTROLYTE FOR ELECTROCHEMICAL C-V PROFILING OF INP-BASED AND GAAS-BASED STRUCTURES

Authors
FAUR M FAUR M FLOOD DJ GORADIA M
Citation
M. Faur et al., ELECTROLYTE FOR ELECTROCHEMICAL C-V PROFILING OF INP-BASED AND GAAS-BASED STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 361-364
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
361 - 364
Database
ISI
SICI code
0921-5107(1994)28:1-3<361:EFECPO>2.0.ZU;2-E
Abstract
A new electrolyte (UNIEL) based on HF, NH3F2, C9H14CIN, CH3COOH and o- H3PO4 has been developed for accurate EC-V net majority carrier concen tration profiling of InP- and GaAs-based III-V semiconductors. The new electrolyte was tested with good results on heterostructures containi ng p- and n-type InP, GaAs,InGaAs and InGaAsP layers.