K. Boulkroun et al., DETERMINATION OF INTERFACE STATE DENSITY ON AU TA2O5/N-INP STRUCTURESBY DIFFERENT METHODS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 416-420
Interface state density is an important parameter to test the quality
of a metal-insulate-semiconductor structure and the efficiency of the
dielectric deposition process. This parameter can be deduced from diff
erent electrical or optoelectrical characterization methods. The condu
ctance method, Terman's method and deep-level transient spectroscopy h
ave been used in order to determine the interface state density of Au/
Ta2O5/n-InP structures fabricated by the plasma process. We point out
the complementarity of these methods for the determination of N-SS ove
r a large range of gaps. Fair agreement is found for energy values clo
se to the middle of the gap, where all three methods are valid.