DETERMINATION OF INTERFACE STATE DENSITY ON AU TA2O5/N-INP STRUCTURESBY DIFFERENT METHODS/

Interface state density is an important parameter to test the quality of a metal-insulate-semiconductor structure and the efficiency of the dielectric deposition process. This parameter can be deduced from diff erent electrical or optoelectrical characterization methods. The condu ctance method, Terman's method and deep-level transient spectroscopy h ave been used in order to determine the interface state density of Au/ Ta2O5/n-InP structures fabricated by the plasma process. We point out the complementarity of these methods for the determination of N-SS ove r a large range of gaps. Fair agreement is found for energy values clo se to the middle of the gap, where all three methods are valid.