A technique for assessing full wafer AlAs/GaAs Bragg reflector structu
res by measuring the normalized reflectance at an array of points over
a wafer is presented in this paper. High resolution maps allow statis
tically meaningful calculations to be performed and also show reflecta
nce patterns relating back to the deposition process. Specific example
s illustrating the utility of this technique in facilitating the optim
ization of the epitaxial layer deposition process are given.