IMAGING OF HIGH-FIELD REGIONS IN SEMIINSULATING GAAS UNDER BIAS

Authors
BERWICK K BROZEL MR BUTTAR CM COWPERTHWAITE M SELLIN P HOU Y
Citation
K. Berwick et al., IMAGING OF HIGH-FIELD REGIONS IN SEMIINSULATING GAAS UNDER BIAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 485-487
Citations number
9
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
28
Issue
1-3
Year of publication
1994
Pages
485 - 487
Database
ISI
SICI code
0921-5107(1994)28:1-3<485:IOHRIS>2.0.ZU;2-U
Abstract
The electric field within high energy particle detectors fabricated fr om semi-insulating GaAs is non-uniform. Two methods which map the elec tric field within these detectors are compared. The data obtained by t hese techniques are self consistent and their application should prove useful in assessing the properties of these and similar detectors.