RADIATION EFFECTS IN OXYNITRIDES GROWN IN N2O

Oxynitrides have been grown by oxidation in N2O in a standard thermal oxidation furnace. Two N2O processes have been studied: oxidation in N 2O only, and two-step oxidation with initial oxidation in O-2 followed by oxidation/nitridation in N2O. Results are presented for radiation damage at 80 and 295K, hole trapping, interface trap creation, electro n spin resonance, and hole de-trapping using thermally-stimulated curr ent analysis. N2O oxynitrides do not appear to have the well-known. dr awbacks of NH3-annealed oxynitrides. Creation of interface traps durin g irradiation is reduced in the N2O oxynitrides, with the degree of im provement depending on the fabrication process.