The defect introduction rate at 295K by 1-MeV electrons in the p-side
of n(+)-p silicon junctions under various applied voltages was measure
d using both DLTS and C-V techniques. The introduction rate of most de
fects is a strong function of applied bias and distance from the junct
ion. Open circuit irradiation produces the smallest introduction rate
while reverse bias enhances the rate by a factor of five for most defe
cts. The C-V technique finds three times the concentration of defects
that the DLTS technique finds. The C-V technique cannot distinguish ty
pes of defects: it sums all defects. Heavy reverse bias irradiations p
roduced unstable junctions that could be partially restabilized by fur
ther opera circuit irradiations. The electron-hole pairs generated by
the irradiation appear to play a major role in the development of the
final defect population resulting from the same irradiation. Even in a
short irradiation, defects initially created early in the irradiation
are altered or annealed by continued irradiation. Recombination-enhan
ced diffusion theory appears to explain some of the results and, there
fore, may be an important factor in the defect introduction process in
many semiconductors.