ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES

The electrical activity of MeV particle irradiation induced lattice de fects in silicon, is studied through their impact on diode characteris tics and on minority carrier lifetime. For the first time results are presented on low-frequency noise spectroscopy for radiation damage and substrate characterisation. The results show that diodes on Cz substr ates are more radiation hard than on epi- and FZ substrates but have a poorer quality before irradiation with respect to noise, minority car rier lifetime and I/V characteristics.