STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS

Authors
NTSOENZOK E BARBOT JF DESGARDIN P VERNOIS J BLANCHARD C ISABELLE DB
Citation
E. Ntsoenzok et al., STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1932-1936
Citations number
17
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
1932 - 1936
Database
ISI
SICI code
0018-9499(1994)41:6<1932:SOTDII>2.0.ZU;2-Y
Abstract
The electrical properties of semiconductor components can be greatly m odified by proton implantation. Spreading resistance, C-V (capacitance voltage) and DLTS (deep levels transient spectroscopy) measurements h ave been used to characterize N-type silicon irradiated by MeV proton at fluences up to 10(14)p(+)cm(-2). The greatest drawback induced by p roton implantation is the overdoping effect which can strongly reduce device efficiency. The present work reports this effect in both anneal ed and unannealed samples.