E. Ntsoenzok et al., STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1932-1936
The electrical properties of semiconductor components can be greatly m
odified by proton implantation. Spreading resistance, C-V (capacitance
voltage) and DLTS (deep levels transient spectroscopy) measurements h
ave been used to characterize N-type silicon irradiated by MeV proton
at fluences up to 10(14)p(+)cm(-2). The greatest drawback induced by p
roton implantation is the overdoping effect which can strongly reduce
device efficiency. The present work reports this effect in both anneal
ed and unannealed samples.