CO-60 GAMMA-RAY AND ELECTRON DISPLACEMENT DAMAGE STUDIES OF SEMICONDUCTORS

Authors
XAPSOS MA SUMMERS GP BLATCHLEY CC COLERICO CW BURKE EA MESSENGER SR SHAPIRO P
Citation
Ma. Xapsos et al., CO-60 GAMMA-RAY AND ELECTRON DISPLACEMENT DAMAGE STUDIES OF SEMICONDUCTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1945-1949
Citations number
16
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
1945 - 1949
Database
ISI
SICI code
0018-9499(1994)41:6<1945:CGAEDD>2.0.ZU;2-U
Abstract
A general method for relating Co-60 gamma ray and monoenergetic electr on beam displacement damage is presented. The approach is based on the concept of effective ''displacement damage dose'', which is analogous to ideas used to study ionizing radiation effects. The response to el ectron damage of p-type gallium arsenide and indium phosphide solar ce lls, as previously reported for p-type silicon solar cells, is proport ional to the square of the nonionizing energy loss.