A COMPARISON OF MONTE-CARLO AND ANALYTIC TREATMENTS OF DISPLACEMENT DAMAGE IN SI MICROVOLUMES

In this paper, we compare Monte Carlo and analytic calculations of dis placement damage resulting from inelastic proton reactions in Si. Thes e comparisons include the nonionizing energy loss rate, the mean recoi l damage energy spectra, and their associated variance. In the limit o f bulk material, both approaches are in good agreement. sensitive volu mes shrink and incident proton energies increase, the ranges of the sp allation recoil fragments approach the smallest dimension of the micro volume, and the pixel-to-pixel damage variance increases rapidly. In t his regime, a Monte Carlo approach is used to describe the damage ener gy distribution. Indeed, we show that such simulations predict the 63 MeV proton-induced dark current histograms more accurately than presen t analytic methods. The Monte Carlo code is also used to explore groun d test fidelity issues for devices with small sensitive volumes.