PROTON-INDUCED CHARGE-TRANSFER DEGRADATION IN CCDS FOR NEAR-ROOM TEMPERATURE APPLICATIONS

Authors
HOPKINS IH HOPKINSON GR JOHLANDER B
Citation
Ih. Hopkins et al., PROTON-INDUCED CHARGE-TRANSFER DEGRADATION IN CCDS FOR NEAR-ROOM TEMPERATURE APPLICATIONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1984-1991
Citations number
15
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
1984 - 1991
Database
ISI
SICI code
0018-9499(1994)41:6<1984:PCDICF>2.0.ZU;2-Z
Abstract
An optical technique for measuring charge transfer inefficiency (CTI) in CCDs, operated under near-room temperature, high readout rate condi tions, is described. It is possible to measure trap emission times and CTI dependence on signal size, background charge and clock waveform s hape to high accuracy, both for serial and parallel transfers. It is s hown that the presence of background charge (or 'fat zero') can substa ntially improve charge transfer efficiency.