SINGLE-EVENT-INDUCED CHARGE COLLECTION AND DIRECT CHANNEL CONDUCTION IN SUBMICRON MOSFETS

The single-event (SE) charge collection of an n-channel submicron MOSF ET is described using three dimensional device simulations. Ion hits i n the drain and in the channel region are considered. For submicron MO SFETs, we show simulation evidence that there may exist a direct sourc e-drain conduction process induced by the ion, called ion-triggered ch anneling (ITC), which may be an important SE upset mechanism in deep s ubmicron scaling. The further study of increased ion-track-length to d evice-gate-length ratios indicate that the direct source-drain conduct ion process assumes increased importance for increased scaling.