EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWERMOSFETS

Authors
DACHS C ROUBAUD F PALAU JM BRUGUIER G GASIOT J TASTET P
Citation
C. Dachs et al., EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWERMOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2167-2171
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
2167 - 2171
Database
ISI
SICI code
0018-9499(1994)41:6<2167:EOTIIP>2.0.ZU;2-3
Abstract
Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive a nd nondestructive events are investigated through current duration obs ervations. The effect of the ion's impact position is experimentally p ointed out. Finally, further investigation with 2D MEDICI simulations [1] show that die different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering.