ION-INDUCED SUSTAINED HIGH-CURRENT CONDITION IN A BIPOLAR DEVICE

Citation
R. Koga et al., ION-INDUCED SUSTAINED HIGH-CURRENT CONDITION IN A BIPOLAR DEVICE, IEEE transactions on nuclear science, 41(6), 1994, pp. 2172-2178
Citations number
18
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
2172 - 2178
Database
ISI
SICI code
0018-9499(1994)41:6<2172:ISHCIA>2.0.ZU;2-R
Abstract
Observation of an ion-induced sustained high current condition (''high current anomaly'') in a bipolar device, that is similar but not ident ical to latchup, is reported. Both high current anomaly and single eve nt upset test results are presented for the AD9048 test device. Photon emission microscopy was used to locate the site of the high current a nomaly. A model of the triggering mechanism based on the results so ob tained is described.