E. Normand et al., SINGLE EVENT UPSET AND CHARGE COLLECTION MEASUREMENTS USING HIGH-ENERGY PROTONS AND NEUTRONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2203-2209
RAMs, microcontrollers and surface barrier detectors were exposed to b
eams of high energy protons and neutrons to measure the induced number
of upsets as well as energy deposition. The WNR facility at Los Alamo
s provided a neutron spectrum similar to that of the atmospheric neutr
ons. Its effect on devices was compared to that of protons with energi
es of 200, 400, 500 and 800 MeV. Measurements indicate that SEU cross
sections for 400 MeV protons are similar to those induced by the atmos
pheric neutron spectrum.