SINGLE EVENT BURNOUT OF POWER MOSFETS CAUSED BY NUCLEAR-REACTIONS WITH HEAVY-IONS

Authors
KUBOYAMA S MATSUDA S KANNO T HIROSE T
Citation
S. Kuboyama et al., SINGLE EVENT BURNOUT OF POWER MOSFETS CAUSED BY NUCLEAR-REACTIONS WITH HEAVY-IONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2210-2215
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
2210 - 2215
Database
ISI
SICI code
0018-9499(1994)41:6<2210:SEBOPM>2.0.ZU;2-5
Abstract
Single event burnout (SEB) phenomenon of power MOSFETs caused by nucle ar reactions with incident heavy ions has been probed experimentally. 520MeV Kr and 3536MeV Xe ions having the same LET were used as inciden t ions for the experiment. The observed SEB threshold voltage was quit e different for both ions. Detailed analysis revealed that the Xe ions can produce excess charge as a result of nuclear reactions with Si at oms. The result suggests that usual SEB immunity test as a function of LET is not adequate for high voltage devices that have much larger se nsitive volume.