S. Kuboyama et al., SINGLE EVENT BURNOUT OF POWER MOSFETS CAUSED BY NUCLEAR-REACTIONS WITH HEAVY-IONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2210-2215
Single event burnout (SEB) phenomenon of power MOSFETs caused by nucle
ar reactions with incident heavy ions has been probed experimentally.
520MeV Kr and 3536MeV Xe ions having the same LET were used as inciden
t ions for the experiment. The observed SEB threshold voltage was quit
e different for both ions. Detailed analysis revealed that the Xe ions
can produce excess charge as a result of nuclear reactions with Si at
oms. The result suggests that usual SEB immunity test as a function of
LET is not adequate for high voltage devices that have much larger se
nsitive volume.