TEMPERATURE AND ANGULAR-DEPENDENCE OF SUBSTRATE RESPONSE IN SEGR

This work examines the role of the substrate response in determining t he temperature and angular dependence of Single-Event Gate Rupture (SE GR). Experimental data indicate that the likelihood of SEGR increases when the temperature of the device is increased or when the incident a ngle is made closer to normal. In this work, simulations are used to e xplore this influence of high temperature on SEGR and to support physi cal explanations for this effect. The reduced hole mobility at high te mperature causes the hole concentration at the oxide-silicon interface to be greater, increasing the transient oxide field near the strike p osition. In addition, numerical calculations show that the transient o xide field decreases as the ion's angle of incidence is changed from n ormal. This decreased field suggests a lowered likelihood for SEGR, in agreement with the experimental trend.