THE EFFECT OF LAYOUT MODIFICATION ON LATCHUP TRIGGERING IN CMOS BY EXPERIMENTAL AND SIMULATION APPROACHES

Authors
DELAROCHETTE H BRUGUIER G PALAU JM GASIOT J ECOFFET R
Citation
H. Delarochette et al., THE EFFECT OF LAYOUT MODIFICATION ON LATCHUP TRIGGERING IN CMOS BY EXPERIMENTAL AND SIMULATION APPROACHES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2222-2228
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
2222 - 2228
Database
ISI
SICI code
0018-9499(1994)41:6<2222:TEOLMO>2.0.ZU;2-T
Abstract
The influence of certain geometrical parameters on latchup triggering in CMOS-1.2 mu m structure is studied by means of experiments and simu lations on test structures. Electrical characterizations are made in o rder to validate quantitatively the analysis achieved by numerical sim ulations. The results of heavy ion irradiation from two different sour ces are given and discussed with regard to the influence of the same g eometrical parameters on the sensitivity of the test structures to lat chup.