CHARACTERIZATION OF SINGLE HARD ERRORS (SHE) IN 1M-BIT SRAMS FROM SINGLE-ION

Authors
POIVEY C CARRIERE T BEAUCOUR J OLDHAM TR
Citation
C. Poivey et al., CHARACTERIZATION OF SINGLE HARD ERRORS (SHE) IN 1M-BIT SRAMS FROM SINGLE-ION, IEEE transactions on nuclear science, 41(6), 1994, pp. 2235-2239
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
2235 - 2239
Database
ISI
SICI code
0018-9499(1994)41:6<2235:COSHE(>2.0.ZU;2-R
Abstract
A Single Hard Error (SHE) characterization was performed on two types of 1Mbit SRAMs : MT5C1008 from MICRON and MSM8128 from HITACHI. On bot h types, test results showed that one single ion is sufficient to crea te a stuck bit. On orbit SHE rate calculation showed that the probabil ity to have a stuck bit in space on a single 1Meg SRAM is rather low.