THE USE OF SPECTROSCOPIC ELLIPSOMETRY TO PREDICT THE RADIATION RESPONSE OF SIMOX

We have studied SIMOX (Separation by Implantation of Oxygen) material using spectroscopic ellipsometry to determine the structure of the bur ied oxide and C-V measurements to determine the radiation response of the buried oxide. Our ellipsometric measurements indicate that the bur ied oxide is best described as a layer of stoichiometric SiO2 which is more dense than bulk vitreous (v-) SiO2. We also find that the radiat ion response of the buried oxide is determined primarily by its densit y. We also find that small variations in the conditions used to prepar e the SIMOX wafer can significantly affect the oxide density and its r adiation response. The density of the buried oxide is also found to af fect how it etches.