Bj. Mrstik et al., THE USE OF SPECTROSCOPIC ELLIPSOMETRY TO PREDICT THE RADIATION RESPONSE OF SIMOX, IEEE transactions on nuclear science, 41(6), 1994, pp. 2277-2283
We have studied SIMOX (Separation by Implantation of Oxygen) material
using spectroscopic ellipsometry to determine the structure of the bur
ied oxide and C-V measurements to determine the radiation response of
the buried oxide. Our ellipsometric measurements indicate that the bur
ied oxide is best described as a layer of stoichiometric SiO2 which is
more dense than bulk vitreous (v-) SiO2. We also find that the radiat
ion response of the buried oxide is determined primarily by its densit
y. We also find that small variations in the conditions used to prepar
e the SIMOX wafer can significantly affect the oxide density and its r
adiation response. The density of the buried oxide is also found to af
fect how it etches.