IMPROVEMENT OF RADIATION HARDNESS IN FULLY-DEPLETED SOI N-MOSFETS USING GE-IMPLANTATION

This work demonstrates a well-controlled technique of channel defect e ngineering by implanting germanium into the channel of a Silicon-On-in sulator (SOI) MOSFET to generate subgap energy states. These subgap st ates act as minority-carrier lifetime killers to reduce parasitic bipo lar effects. The Ge-implant also serves the dual purpose of positionin g most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel thresh old voltage.