FULLY-DEPLETED SUBMICRON SOI FOR RADIATION-HARDENED APPLICATIONS

Using fully-depleted technology, the Loral 256K SOI SRAM has demonstra ted under worst case SEU and prompt dose testing an LET threshold of a t least 80 MeVcm ($) over cap 2/mg, and a prompt dose rate upset leve l of greater then 4E10 rad(Si)/s, respectively, without design hardeni ng. Total dose testing on transistors fabricated on enhanced bond and etchback SOI substrates indicates over 100 krad(Si) capability. Togeth er, these results represent the first description of a fully depleted SOI technology for all radiation-hardened applications except extreme total dose.