NOISE CHARACTERIZATION OF TRANSISTORS IN A 1.2-MU-M CMOS SOI TECHNOLOGY UP TO A TOTAL-DOSE OF 12-MRAD-(SI)

The analog performance of the Thomson HSOI3-HD technology has been mea sured up to a total dose of 12 Mrad(Si) of ionizing radiation (Co-60). The threshold voltage shift is -170 mV for p-channel and -20 mV for n -channel transistors. Transconductance degradation is respectively 4% and 17%. Noise has been measured in the 500 Hz-25 MHz bandwidth. In ad dition to the I/f and white noise, a generation-recombination contribu tion appears in the noise spectrum. This contribution is sensitive to the bias applied to the backgate and body electrodes. The white noise increase after irradiation is 16% for p-channel and 35% for n-channel transistors. p-channel transistors have very low I/f noise and are les s sensitive to irradiation effects.