TOTAL-DOSE EFFECTS ON NEGATIVE VOLTAGE REGULATOR

Citation
J. Beaucour et al., TOTAL-DOSE EFFECTS ON NEGATIVE VOLTAGE REGULATOR, IEEE transactions on nuclear science, 41(6), 1994, pp. 2420-2426
Citations number
8
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
41
Issue
6
Year of publication
1994
Part
1
Pages
2420 - 2426
Database
ISI
SICI code
0018-9499(1994)41:6<2420:TEONVR>2.0.ZU;2-5
Abstract
Functional failure at low dose level (4 Krad(Si)) on voltage regulator s (LM137) from different manufacturers are analysed. Dose rate effects on parts hardness are evaluated, showing that lowering the dose rate degrade more the IC's in the range 55 rad(Si)/s- 0,8 rad(Si)/s A failu re mechanism is proposed, mainly based on circuit analysis, voltage co ntrast measurements, local irradiation and local electrical measuremen ts with probe station. A spice simulation was performed, providing qua ntitative informations on the degradation. In the light of such a fail ure analysis and dose rate effects, practical implications on radiatio n assurance are discussed.