Functional failure at low dose level (4 Krad(Si)) on voltage regulator
s (LM137) from different manufacturers are analysed. Dose rate effects
on parts hardness are evaluated, showing that lowering the dose rate
degrade more the IC's in the range 55 rad(Si)/s- 0,8 rad(Si)/s A failu
re mechanism is proposed, mainly based on circuit analysis, voltage co
ntrast measurements, local irradiation and local electrical measuremen
ts with probe station. A spice simulation was performed, providing qua
ntitative informations on the degradation. In the light of such a fail
ure analysis and dose rate effects, practical implications on radiatio
n assurance are discussed.