TOTAL-DOSE HARDNESS OF FIELD-PROGRAMMABLE GATE ARRAYS

In this paper we present the effect of total dose ionization of nonhar dened field programmable gate arrays considered for space applications . By irradiating test structures and modeling the circuits that includ e total dose degradation, the basic leakage mechanism in the design at elevated temperature can be understood. Results show that a large arr ay of CMOS inverter structures will conduct large currents when the th reshold voltages of the p and n-channel transistors reach the transiti on point of switching. Results show that if the n- and p-channel thres holds were to be increased in the process, this problem can be mitigat ed and hardness above 100 krad(Si) can be achieved.