STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY

We present experimental results from a fast charge amplifier and a wid eband analog buffer processed in the DMILL BiCMOS-JFET radhard SOI tec hnology and irradiated up to 4.5 x 10(14) protons/cm(2). In parallel, we have irradiated elementary transistors. These components were biase d and electrical measurements were done 30 min after beam stop. By eva luating variations of main SPICE parameters, i. e., threshold voltage shift for CMOS and current gain variation for bipolar transistors, we have simulated the wideband analog buffer at different doses. These SP ICE simulations are in good agreement with measured circuit degradatio ns. The behavior of the charge amplifier is consistent with extraction of transconductance and pinch-off voltage shift of the PJFET.