FAST SWITCHED-BIAS ANNEALING OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE AND ITS APPLICATION FOR TESTING OF RADIATION EFFECTS IN MOS STRUCTURES

A method for low-dose-rate MOS device response testing is presented an d verified. The test technique is based on the use of a special switch ed-bias irradiation with subsequent positive and negative pulses. The negative bias pulses provide nearly complete annealing of the oxide ch arge trapped during the positive bias pulses. As a result, after a ser ies of positive/negative cycles the value of oxide-trapped charge does not change significantly but the interface charge increases. The adva ntages, limitations and applications of this test technique are descri bed.