This paper reports on the evaluation of photodetectors fabricated from
a ternary semiconductor, TlBrxI1-x for application in scintillation s
pectroscopy. These photodetectors are characterized in terms of their
resistivity, charge transport parameters, quantum efficiency as a func
tion of wavelength, and finally their performance as scintillation spe
ctrometers. The details about TlBrxI1-x purification, crystal growth a
nd device fabrication are also addressed.