THE TRAPPING OF HYDROGEN-IONS IN VANADIUM AND TITANIUM

The accumulation of implanted deuterium has been investigated at room temperature in vanadium, titanium and their alloys up to (2-15) x 10(1 7) ions cm(-2) fluences by means of D(d, p)T reaction. The amount of a ccumulated D was measured using a 700 KeV D+ ion beam during implantat ion. It is found that concentration of implanted deuterium in irradiat ed samples nonmonotonously increases with increasing fluence and in a complicated manner depends upon V-Ti alloy composition. These data are explained by concentration dependence of D diffusion coefficient in V -Ti alloys, structural ion irradiation induced inhomogeneity of alloys with > 5-8 at.% Ti, and irradiation-enhanced diffusion of deuterium.