ANODIC PASSIVATION OF P-INP(100) IN (NH4)(2)S-X SOLUTION

p-InP (100) was electrochemically sulfur passivated in (NH4)(2)S-x sol ution, and the resulting surfaces analyzed by XPS, AES, and SEM. It wa s found that one monolayer of sulfur adsorbed on the InP surface at po tentials below 0.3 V (vs. SCE); while at potentials above 0.3 V, a 3-d imensional In2S3 layer was formed. Conditions for preparation of a con tinuous, 150 nm thick In2S3 passivating layer have been determined.