SURFACE ELECTRONIC-STRUCTURE OF SINGLE-DOMAIN SI(001)2X2-AL - AN ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY STUDY USING SYNCHROTRON-RADIATION

Authors
YEOM HW ABUKAWA T TAKAKUWA Y NAKAMURA M KIMURA M KAKIZAKI A KONO S
Citation
Hw. Yeom et al., SURFACE ELECTRONIC-STRUCTURE OF SINGLE-DOMAIN SI(001)2X2-AL - AN ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY STUDY USING SYNCHROTRON-RADIATION, Surface science, 321(3), 1994, pp. 177-182
Citations number
15
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
321
Issue
3
Year of publication
1994
Pages
177 - 182
Database
ISI
SICI code
0039-6028(1994)321:3<177:SEOSS->2.0.ZU;2-P
Abstract
The electronic structure of a single-domain Si(001)2 X 2-Al surface ha s been studied by angle-resolved photoelectron spectroscopy (ARPES) us ing synchrotron radiation. Through detailed ARPES measurements along v arious symmetry axes of the surface Brillouin zone, the existence and dispersions of five surface states are identified, one at binding ener gies a little less than 1 eV and the others between 1 and 2 eV. The or igin of the surface states are discussed in terms of the Al-dimer stru ctures on Si(001).