INITIAL-STAGES OF SI-MOLECULAR BEAM EPITAXY ON SI(111) STUDIED WITH REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY MEASUREMENTS AND MONTE-CARLO SIMULATIONS

This is a report on the initial behaviour of homoepitaxial growth of S i on Si(111) based on reflection high-energy electron diffraction (RHE ED) intensity measurements and kinetic solid-on-solid Monte Carlo simu lations. A quenching of the first RHEED-oscillation corresponding to t he first double layer is observed over a wide temperature range. This suppression could be simulated by introducing a defect related, extra activation energy for growth on top of the first and subsequently form ed bilayers (BL). As a result of the increased activation energy, the interface width was shown to increase with the substrate temperature a t the beginning of the deposition. The gradual return to regular BL-by -BL growth was accomplished by assigning an increased hopping probabil ity to adatoms situated on top of step edges.