SUBMONOLAYER GROWTH OF PB ON CU(III) - SURFACE ALLOYING AND DE-ALLOYING

Citation
C. Nagl et al., SUBMONOLAYER GROWTH OF PB ON CU(III) - SURFACE ALLOYING AND DE-ALLOYING, Surface science, 321(3), 1994, pp. 237-248
Citations number
24
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
321
Issue
3
Year of publication
1994
Pages
237 - 248
Database
ISI
SICI code
0039-6028(1994)321:3<237:SGOPOC>2.0.ZU;2-4
Abstract
In spite of the immiscibility of Pb in bulk Cu, atomically resolved sc anning tunneling microscopy reveals surface alloy formation of Pb depo sited on Cu(111), even at 300 K. Due to kinetic Limitations at room te mperature, the incorporation of Pb is restricted to advance from step edges, while after annealing to 470 K or higher, embedded Pb atoms are found to be randomly distributed over terraces. At low tunneling volt ages, standing waves of surface-state electrons scattered by embedded Pb atoms could be observed. The maximum packing density of the surface alloy is about 40% (=0.4 ML) of a close-packed Pb overlayer. Thus, de position above 0.4 ML and subsequent annealing results in hexagonal cl ose-packed Pb regions, whereas on the nonannealed surface hexagonal cl ose-packed Pb islands are already found at 0.2 ML. Eventually, at 1 ML the surface alloy is entirely replaced by a Pb overlayer.