AN EXPERIMENTAL-STUDY OF AN INTERFACE REACTION AT THE PRACTICAL PD SIINTERFACE BY XPS/

Authors
DAI DX DAVOLI I
Citation
Dx. Dai et I. Davoli, AN EXPERIMENTAL-STUDY OF AN INTERFACE REACTION AT THE PRACTICAL PD SIINTERFACE BY XPS/, Vacuum, 46(2), 1995, pp. 139-142
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
46
Issue
2
Year of publication
1995
Pages
139 - 142
Database
ISI
SICI code
0042-207X(1995)46:2<139:AEOAIR>2.0.ZU;2-W
Abstract
X-ray photoelectron spectroscopy (XPS) measurements of core-level and valence band have been used to study the practical Pd/Si interface. Ev idence of silicide, Pd2Si, formed by chemical reaction at this interfa ce has been obtained. A monotonic increase of the branching ratio for two Pd 3d spin-orbit split peaks of silicide, Pd2Si, with decreasing p hotoemission angles was measured. Some possible interpretations for th is change are also presented.