A TI-B-N FILM FORMED BY EB-ION PLATING AND N-ION-BOMBARDMENT OF A TI-B FILM

Citation
Qq. Yang et al., A TI-B-N FILM FORMED BY EB-ION PLATING AND N-ION-BOMBARDMENT OF A TI-B FILM, Vacuum, 46(2), 1995, pp. 181-183
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
46
Issue
2
Year of publication
1995
Pages
181 - 183
Database
ISI
SICI code
0042-207X(1995)46:2<181:ATFFBE>2.0.ZU;2-K
Abstract
A Ti-B-N film has been obtained by two methods, which are EB-ion plati ng and N ion bombardment of a Ti-B film. TEM micrograph shows that the Ti-B-N film has a dense nano-crystalline structure. X-ray and electro n diffraction indicate that the Ti-B-N film consists of fee TiN with d ispersed simple orthorhombic TiB, cubic BN and simple hexagonal Ti-B-N phases. The deposition temperature can be lowered to obtain Ti-B-N fi lm by N ion bombardment. AES depth profile analysis indicates that the N ion bombardment extends interfacial diffusion zone. Scratch test re sults show that the N ion bombardment increases the film-to-substrate adhesion.