Pj. Sebastian et Hl. Hu, IDENTIFICATION OF THE IMPURITY PHASE IN CHEMICALLY DEPOSITED CDS THIN-FILMS, Advanced materials for optics and electronics, 4(6), 1994, pp. 407-412
Identification of the impurity phase present in chemically deposited C
dS thin films and in the precipitate used for screen printing CdS/CdTe
solar cells is reported in this paper. X-ray diffraction (XRD) studie
s of the films and the precipitate showed that the impurity phase is a
mixture of cadmium oxide sulphate (Cd3O2SO4) and cadmium oxide (CdO).
Analysis of the films and the powders obtained using thiourea (TU) an
d thioacetamide (TA) as sulphurising agents showed that the impurity p
hase is predominantly present when TU is used in the chemical bath. Th
e high conductivity shown by chemically CdS films (using TU) when anne
aled at higher temperatures in air is attributed to the predominance o
f the conducting CdO phase in the film.