O. Keller et al., OPTICALLY STIMULATED INTERSUBBAND ABSORPTION IN UNDOPED AMORPHOUS SI SIO2 QUANTUM-WELL, Advanced materials for optics and electronics, 4(6), 1994, pp. 417-421
Intersubband absorption has been observed in undoped amorphous multipl
e-quantum-well (MQW) strucctures under interband excitation. The trans
itions take place between the first and second subbands of the conduct
ion band and involve non-equilibrium electrons excited into the first
subband by optical pumping, The absorption band FWHM of 0.1 eV is much
larger than for crystalline MQWs, a fact which reflects the relaxatio
n of the electron momentum conservation in the QW plane. The high join
t density of states end oscillator strength for the intersubband trans
itions in amorphous QWs allow one to observe the absorption at low ele
ctron concentrations (N-e approximate to 10(13) cm(-3)) in the ground
conduction subband.