A 1-W HIGH-EFFICIENCY Q-BAND MMIC POWER-AMPLIFIER

Authors
CHI JCL LESTER JA HWANG Y CHOW PD HUANG MY
Citation
Jcl. Chi et al., A 1-W HIGH-EFFICIENCY Q-BAND MMIC POWER-AMPLIFIER, IEEE microwave and guided wave letters, 5(1), 1995, pp. 21-23
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
5
Issue
1
Year of publication
1995
Pages
21 - 23
Database
ISI
SICI code
1051-8207(1995)5:1<21:A1HQMP>2.0.ZU;2-X
Abstract
Recent development on MMIC power amplifier has pushed the power-added efficiency (PAE) of 1-W amplifier to 29.4%. The power amplifier, using 0.15-mum InGaAs T-gate PHEMT devices, can deliver 1.2 W with 25% effi ciency at 40 GHz when the drain is biased at 5 V. When the drain volta ge drops to 4 V the output power is 1 W with 9-db associated gain and 29.4% PAE. The measured linear gain is averaged to be 12.5 db from 38- 44 GHz.