THE BINARY-SYSTEM OF BN-MG3N2 UNDER HIGH-PRESSURES AND TEMPERATURES

Citation
Is. Gladkaya et al., THE BINARY-SYSTEM OF BN-MG3N2 UNDER HIGH-PRESSURES AND TEMPERATURES, Journal of Materials Science, 29(24), 1994, pp. 6616-6619
Citations number
11
Categorie Soggetti
Material Science
ISSN journal
00222461
Volume
29
Issue
24
Year of publication
1994
Pages
6616 - 6619
Database
ISI
SICI code
0022-2461(1994)29:24<6616:TBOBUH>2.0.ZU;2-B
Abstract
The phase relations in the binary system of BN-Mg3N2 were investigated in regions of pressure, P, from 3.0 GPa to 8.0 GPa and temperature, T , up to 1900 K by means of in situ differential thermal analysis (DTA) and X-ray diffraction (XRD) of the quenched products. It was found th at the succession in formation of the intermediate compounds Mg3BN3 (H P-phase) and Mg3B2N4 depends on the molar ratios of hexagonal boron ni tride (hBN) and Mg3N2 and on the P-T conditions. In the P-T region of cubic boron nitride (cBN) growth, the system has three metastable eute ctics such as Mg3N2-hBN, Mg3BN3-hBN and Mg3B2N4-hBN. It was found that eutectic temperatures are pressure dependent. The difference in the l ower-temperature limits of cBN growth regions is explained by cBN crys tallization from different eutectic melts.