GAAS SINGLE-BARRIER VARACTORS FOR MILLIMETER-WAVE TRIPLERS - GUIDELINES FOR ENHANCED PERFORMANCE

Authors
KRISHNAMURTHI K NILSEN SM HARRISON RG
Citation
K. Krishnamurthi et al., GAAS SINGLE-BARRIER VARACTORS FOR MILLIMETER-WAVE TRIPLERS - GUIDELINES FOR ENHANCED PERFORMANCE, IEEE transactions on microwave theory and techniques, 42(12), 1994, pp. 2512-2516
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on microwave theory and techniques → ACNP
ISSN journal
00189480
Volume
42
Issue
12
Year of publication
1994
Part
2
Pages
2512 - 2516
Database
ISI
SICI code
0018-9480(1994)42:12<2512:GSVFMT>2.0.ZU;2-J
Abstract
Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered fr om low and because of leaky barriers. By placing a thin AlAs layer in the center of an Al0.4Ga0.6As barrier, and using In0.2Ga0.8As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely re active multiplication, without the output-power saturation both predic ted and observed in triplers using leaky-barrier SBVs.